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| EPA018B-70 ISSUED 11/01/2007 High Efficiency Heterojunction Power FET FEATURES * * * * Non-Hermetic Low Cost Ceramic 70mil Package +20.0 dBm Output Power at 1dB Compression 11.0 dB Power Gain at 18GHz Typical 0.75 dB Noise Figure and 12.5 dB Associated Gain at 12GHz 0.3 x 180 Micron Recessed "Mushroom" Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides Extra High Power Efficiency, and High Reliability * * * ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE NF GA IDSS GM VP BVGD BVGS RTH PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression VDS = 6V, IDS 50% IDSS Gain at 1dB Compression VDS = 6V, IDS 50% IDSS Power Added Efficiency at 1dB Compression VDS = 6V, IDS 50% IDSS Noise Figure VDS = 2V, IDS = 15mA Associate Gain VDS = 2V, IDS = 15mA Saturated Drain Current Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance f = 12GHz f = 18GHz f = 12GHz f =18GHz f = 12GHz f = 12GHz f = 12GHz Caution! ESD sensitive device. MIN 18.5 11.0 TYP 20.0 20.0 13.5 11.0 45 0.75 12.5 30 35 -9 -6 55 60 -1.0 -15 -14 480* o MAX UNITS dBm dB % dB dB VDS = 3 V, VGS = 0 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 1.0 mA IGD = 1.0mA IGS = 1.0mA 80 -2.5 mA mS V V V C/W Notes: * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25C1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG 1. 2. CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature ABSOLUTE 12 V -6 V Idss 9 mA 16 dBm 285 mW 175C -65/+175C 1 CONTINUOUS 6V -3 V 40 mA 1.5 mA 2 @ 3dB compression 240 mW 150C -65/+150C Exceeding any of the above ratings may result in permanent damage. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 EPA018B-70 ISSUED 11/01/2007 High Efficiency Heterojunction Power FET S-PARAMETERS 6V, 1/2 Idss FREQ (GHz) --- S11 --MAG ANG --- S21 --MAG ANG --- S12 --MAG ANG --- S22 --MAG ANG 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 0.984 0.950 0.906 0.863 0.813 0.764 0.715 0.663 0.614 0.587 0.561 0.539 0.573 0.611 0.613 0.620 0.640 0.692 0.691 0.731 0.783 0.771 0.752 0.776 0.756 0.742 -19.0 -38.2 -56.4 -74.0 -90.7 -105.0 -120.3 -134.7 -157.7 -179.9 168.8 153.6 127.2 104.9 90.9 74.4 58.9 49.7 32.0 16.7 7.8 -2.6 -20.8 -37.7 -48.6 -62.4 5.081 4.859 4.547 4.348 4.195 3.973 3.746 3.572 3.501 3.388 3.307 3.248 3.097 2.873 2.805 2.730 2.432 2.365 2.236 2.163 2.061 1.923 1.800 1.693 1.690 1.710 162.1 144.2 127.3 111.9 97.2 82.9 68.8 55.9 41.4 26.4 13.4 0.0 -15.8 -31.1 -46.4 -62.7 -76.4 -87.1 -104.4 -120.6 -134.9 -148.7 -166.5 174.8 160.0 144.5 0.014 0.026 0.035 0.041 0.047 0.049 0.050 0.046 0.044 0.044 0.044 0.045 0.049 0.050 0.055 0.059 0.056 0.075 0.064 0.064 0.065 0.062 0.058 0.054 0.055 0.060 75.9 63.4 51.4 42.1 32.9 24.2 15.3 6.9 5.6 2.1 0.2 2.0 -0.6 -6.1 -13.0 -20.7 -20.7 -32.3 -49.1 -59.8 -70.3 -85.6 -103.2 -123.0 -139.5 -154.9 0.813 0.789 0.766 0.745 0.713 0.675 0.649 0.612 0.605 0.585 0.562 0.551 0.527 0.510 0.513 0.503 0.463 0.522 0.540 0.591 0.578 0.592 0.592 0.584 0.568 0.555 -11.1 -23.7 -35.3 -44.6 -53.3 -64.4 -74.6 -82.6 -87.5 -97.0 -110.8 -122.8 -131.9 -143.2 -162.9 178.0 169.1 157.0 133.7 117.3 106.6 95.6 76.9 59.7 45.9 33.7 DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2007 |
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